Samsung 4 Gb Ddr2 Sdram 667 Mhz Ddr2 667 Pc2 5300 1 80 V Ecc Registered 240 Pin Dimm M393t5160qzace6
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M393T5160QZA-CE6
by Samsung
4 GB - DDR2 SDRAM - 667 MHz DDR2-667/PC2-5300 - 1.80 V - ECC - Registered - 240-pin - DIMM


Upc:
711050707251
Description:
Samsung Computing DRAM The right memory solution can be one of your most important competitive advantages. Samsung leads the industry with cutting-edge DRAM technology, including DDR2, DDR3-and soon, DDR4-to heighten the success of your designs. Leverage Samsung's fastest and highest performance DDR3 memory today with a dual-channel, 128-bit memory module to enable a throughput of more than 25.6GB/s.Meet intensifying power-efficiency demands Our latest-generation Computing DRAM provides an outstanding combination of speed and efficiency. Dedicated on-board power-management features help reduce power consumption during idle memory cycles. Energy efficiency can translate into big cost savings for server and desktop environments, long battery life for notebook users, and small carbon footprints. Samsung Computing DRAM solutions boost competitiveness with features enabling you to: Capitalize on our ultralow-power memory technology with 30-nm class, 1.35V, 2Gb DDR3. Achieve memory power savings of up to 67 percent using Samsung's latest 20-nm class DDR3 solutions, compared to existing 50-nm class DDR3. Operate at voltages as low as 1.2V while enabling nearly twice the bandwidth of DDR3 with upcoming DDR4 memory.
General Information
Product Type
RAM Module
Manufacturer Part Number
M393T5160QZACE6
Manufacturer Website Address
http://www.samsungusa.com
Manufacturer
Samsung
Product Name
4GB DDR2 SDRAM Memory Module
Brand Name
Samsung
Miscellaneous
Green Compliant
Yes
Green Compliance Certificate/Authority
China RoHS
Physical Characteristics
Number of Pins
240-pin
Form Factor
DIMM
Width
1.2"
Technical Information
CAS Latency
CL5
Error Checking
ECC
Signal Processing
Registered
Memory Speed
667 MHz
Memory Size
4 GB
Memory Technology
DDR2 SDRAM
Memory Standard
DDR2-667/PC2-5300
Memory Voltage
1.80 V
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