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Warranties Available
M393T5160QZA-CE6
by Samsung
4 GB - DDR2 SDRAM - 667 MHz DDR2-667/PC2-5300 - 1.80 V - ECC - Registered - 240-pin - DIMM
- Upc:
- 711050707251
- Description:
- Samsung Computing DRAM The right memory solution can be one of your most important competitive advantages. Samsung leads the industry with cutting-edge DRAM technology, including DDR2, DDR3-and soon, DDR4-to heighten the success of your designs. Leverage Samsung's fastest and highest performance DDR3 memory today with a dual-channel, 128-bit memory module to enable a throughput of more than 25.6GB/s.Meet intensifying power-efficiency demands Our latest-generation Computing DRAM provides an outstanding combination of speed and efficiency. Dedicated on-board power-management features help reduce power consumption during idle memory cycles. Energy efficiency can translate into big cost savings for server and desktop environments, long battery life for notebook users, and small carbon footprints. Samsung Computing DRAM solutions boost competitiveness with features enabling you to: Capitalize on our ultralow-power memory technology with 30-nm class, 1.35V, 2Gb DDR3. Achieve memory power savings of up to 67 percent using Samsung's latest 20-nm class DDR3 solutions, compared to existing 50-nm class DDR3. Operate at voltages as low as 1.2V while enabling nearly twice the bandwidth of DDR3 with upcoming DDR4 memory.
General Information
- Product Type
- RAM Module
- Manufacturer Part Number
- M393T5160QZACE6
- Manufacturer Website Address
- http://www.samsungusa.com
- Manufacturer
- Samsung
- Product Name
- 4GB DDR2 SDRAM Memory Module
- Brand Name
- Samsung
Miscellaneous
- Green Compliant
- Yes
- Green Compliance Certificate/Authority
- China RoHS
Physical Characteristics
- Number of Pins
- 240-pin
- Form Factor
- DIMM
- Width
- 1.2"
Technical Information
- CAS Latency
- CL5
- Error Checking
- ECC
- Signal Processing
- Registered
- Memory Speed
- 667 MHz
- Memory Size
- 4 GB
- Memory Technology
- DDR2 SDRAM
- Memory Standard
- DDR2-667/PC2-5300
- Memory Voltage
- 1.80 V
